摘要 |
PURPOSE: A method for trimming a photoresist pattern is provided to efficiently reduce the critical dimension of a photoresist and to reinforce the depth of focus. CONSTITUTION: A semiconductor substrate (100) including one or more layers (102) to be patterned is provided. A hard mask layer (103), a base antireflective coating layer (104), and a photoresist layer (106) are successively formed on one or more layers. A photoresist pattern (106') with a plurality of features is formed by exposing the photoresist layer. A photoresist trimming composition including a matrix polymer is coated on the photoresist pattern. The polarity of the matrix polymer is changed on the surface of the photoresist pattern by heating the semiconductor substrate. The surface of the photoresist pattern is removed by developing solutions in contact with the photoresist pattern. |