NITRIDE SEMICONDUCTOR DEVICE HAVING ELECTRON BLOCKING LAYER AND METHOD OF GROWING ELECTRON BLOCKING LAYER

摘要

PURPOSE: A nitride compound semiconductor device and a method for growing the electron blocking layer are provided to prevent overflower by increasing the band gap. CONSTITUTION: A nitride compound semiconductor device includes an n-type nitride semiconductor layer (23) and an active layer (25). The nitride compound semiconductor device includes a p-type electron blocking layer (27) and a p-type nitride semiconductor layer (29). The p-type electron blocking layer contains Al. Al composition ratio changes from the active layer to the p-type nitride semiconductor layer. The Al composition ratio decreases from the active layer to the p-type nitride semiconductor layer.