SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to obtain writing and reading margin under low power voltage by controlling a selection word line potential according to the variation of a threshold voltage of a memory cell transistor. CONSTITUTION: A word line (WL) is connected to a static memory cell. A word line driver (WDR) drives the word line in a selection state. A power line supplies power voltage (VDD) to the word line driver. A level shift circuit is connected between the word line and a ground line and shifts the voltage of the word line driven in the selection state to a lower voltage level. [Reference numerals] (AA) Threshold voltage characteristics similar to those of PQ1 and PQ2