| 摘要 |
A semiconductor device is provided which comprises a nonvolatile memory capable of storing complementary data and performing a more accurate blank check than ever before. A nonvolatile memory comprises a memory array having a plurality of twin cells arranged therein for storing complementary data, and first to third determination units. The first determination unit determines, for each of the twin cells selected by a selection circuit, whether or not a first condition that the threshold voltage of one memory cell is higher than a reference value commonly set and the threshold voltage of the other memory cell is lower than the reference value is satisfied. The second determination unit determines whether or not a second condition that all the selected twin cells satisfy the first condition is satisfied. The third determination unit determines, based on the determination result of the second determination unit, whether or not each of the selected twin cells is in a blank state.
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