发明名称 CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME
摘要 <p>The present invention provides a crystalline silicon ingot and a fabricatingmethod thereof. The method of the invention utilizes a nucleation promotion layer to promote a plurality of silicon grains nucleating on the nucleation promotion layer from a silicon melt and growing in a vertical direction until entirety of the silicon melt is solidified to obtain the crystalline silicon ingot. Figure 9</p>
申请公布号 SG190514(A1) 申请公布日期 2013.06.28
申请号 SG20120078762 申请日期 2012.10.23
申请人 SINO-AMERICAN SILICON PRODUCTS INC. 发明人 YU, WEN-HUAI;YANG, CHENG-JUI;YANG, YU-MIN;PAI, KAI-YUAN;LAN, WEN-CHIEH;CHIANG, YU-TSUNG;HSU, SUNG-LIN;HSU, WEN-CHING;LAN, CHUNG-WEN;CHOU, HUNG-SHENG
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