| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having improved surface flatness of an n-type clad layer contacting an active layer; and provide a semiconductor light-emitting device manufacturing method. <P>SOLUTION: A semiconductor light-emitting device comprises: an n-type clad layer 30 including a first nitride semiconductor layer 31 composed of n-type GaN, a second nitride semiconductor layer 32 composed of In<SB POS="POST">X</SB>Al<SB POS="POST">Y</SB>Ga<SB POS="POST">1-X-Y</SB>N (0≤X<1, 0≤Y<1, 0<X+Y<1) and a third nitride semiconductor layer 33 composed of n-type GaN, which are laminated in this order; an active layer 40 arranged on the third nitride semiconductor layer 33 of the n-type clad layer 30; and a p-type clad layer 50 arranged on the active layer 40. <P>COPYRIGHT: (C)2013,JPO&INPIT |
