NITRIDE SEMICONDUCTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor device and a manufacturing method thereof are provided to reduce a leakage current through a barrier layer by forming a base area of a heterojunction bipolar transistor to include the barrier layer. CONSTITUTION: A semiconductor layer(301,303,305) includes a plurality of nitride-based electrode junction layers and a plurality of barrier layers. The plurality of nitride-based electrode junction layers have different electrical characteristics. The plurality of barrier layers are separately arranged between the electrode junction layers. A plurality of electrodes(307) are respectively in contact with the plurality of nitride-based electrode junction layers. The plurality of electrodes are separated from each other.