发明名称 |
Methods and structures for increased thermal dissipation of thin film resistors |
摘要 |
A method of forming a semiconductor structure includes forming at least one trench in an insulator layer formed on a substrate. A distance between a bottom edge of the at least one trench and a top surface of a substrate is shorter than a distance between an uppermost surface of the insulator layer and the top surface of the substrate. The method also includes: forming a resistor on the insulator layer and extending into the at least one trench; forming a first contact in contact with the resistor; and forming a second contact in contact with the resistor such that current is configured to flow from the first contact to the second contact through a central portion of the resistor.
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申请公布号 |
US8470682(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US20100968001 |
申请日期 |
2010.12.14 |
申请人 |
ANDERSON BRENT A.;RANKIN JED H.;ROBISON ROBERT R.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;RANKIN JED H.;ROBISON ROBERT R. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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