| 摘要 |
The warpage of a compound semiconductor carrier substrate whilst growing a silicon carbide interface layer and a diamond layer is minimised by controlling the temperature variation across the wafer during growth to be less than 80oC. Good thermal contact between the carrier substrate and a supporting substrate by ensuring that the contact faces are flat or conformal. The aspect ratio of the carrier wafer defined by a ratio of thickness to width of greater than 0.25/100 is used. The diamond layer can be separated from the carrier substrate to be used as an insulating heat dissipating substrate for III-V microwave amplifier circuits or LEDs. |
