发明名称 |
In situ grown gate dielectric and field plate dielectric |
摘要 |
<p>Methods and apparatuses are disclosed for providing heterostructure field effect transistors (HFETs) with high-quality gate dielectric and field plate dielectric. The gate dielectric and field plate dielectric are in situ deposited on a semiconductor surface. The location of the gate electrode may be defined by etching a first pattern in the field plate dielectric and using the gate dielectric as an etch-stop. Alternatively, an additional etch-stop layer may be in situ deposited between the gate dielectric and the field plate dielectric. After etching the first pattern, a conductive material may be deposited and patterned to define the gate electrode. Source and drain electrodes that electrically contact the semiconductor surface are formed on opposite sides of the gate electrode.</p> |
申请公布号 |
EP2605283(A2) |
申请公布日期 |
2013.06.19 |
申请号 |
EP20120193675 |
申请日期 |
2012.11.21 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
EDWARDS, JOHN PAUL;LIU, LINLIN |
分类号 |
H01L29/778;H01L21/28;H01L21/336;H01L29/20;H01L29/423;H01L29/51 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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