| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve withstand voltage performance by moderating the curvature of a diffusion layer. CONSTITUTION: A cell active region includes a P base layer(3). The P base layer is diffused on a high concentration N type substrate(1). The P well layer(4) is adjacent to the P base layer. The P well layer is diffused on the high concentration N type substrate to surround the cell active region. A trench region(5) is formed in a region except both ends of the P well layer.</p> |
