STORAGE ELEMENT, STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a storage element having excellent characteristic balance by reducing asymmetry of thermal stability about the information writing direction.

SOLUTION: The storage element includes a layer structure having a storage layer which has magnetization perpendicular to the film surface and the orientation of magnetization that changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming the reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. When current is fed in the lamination direction of the layer structure, the orientation of magnetization of the storage layer changes thus recording the information in the storage layer. The magnetization fixed layer has a multilayer ferri-pin structure of at least two layers of a ferromagnetic layer and a non-magnetic layer containing Cr.

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