| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ultraviolet semiconductor light emitting device which can improve quantum efficiency. <P>SOLUTION: An ultraviolet light emitting device includes: an active layer 19 disposed under a first conductive semiconductor layer 15; a reflective layer 21 disposed under the active layer 19; and a second conductive semiconductor layer 23 disposed under the reflective layer 21. The reflective layer 21 comprises a plurality of compound semiconductor layers. Each of the compound semiconductor layers comprises at least two semiconductor materials. The contents of the two semiconductor materials are different in each of the compound semiconductor layers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
