Method for forming photolithography mask corresponding to target pattern that is desired in resin layer in microelectronics field, involves controlling final simulated pattern with respect to desired target pattern using set of rules

摘要

The method involves performing simulation of photolithography (E04) using a simulation mask in order to obtain a pattern simulated in a resin layer. The simulated pattern is compared with a target pattern (E05). The mask is modified (E06) based on comparison result in an event of non-satisfaction of a criterion. The mask is verified (E07) by performing the photolithography simulation using the photolithography mask and a dummy mask so as to obtain final simulated pattern. The final simulated pattern is controlled with respect to the desired target pattern using a set of rules. Independent claims are also included for the following: (1) a computer system (2) a directly loadable computer program product comprising a set of instructions for performing a method for forming a photolithography mask corresponding to a pattern target (3) a readable medium comprising a set of instructions for performing a method for forming a photolithography mask corresponding to a pattern target.