NON-VOLATILE STORAGE ELEMENT AND NON-VOLATILE STORAGE DEVICE

摘要

This non-volatile storage element is equipped with: a first electrode (103); a second electrode (106); and a variable resistance layer (104) that comprises metal oxides and is formed between the first electrode (103) and the second electrode (106). The variable resistance layer (104) includes: a first oxide layer (104a) that is provided on the first electrode (103) and has a resistivity of rhox; a second oxide layer (104b) that is provided on the first oxide layer (104a) and has a resistivity of rhoy (where rhox < rhoy); a third oxide layer (104c) that is provided on the second oxide layer (104b) and has a resistivity of rhoz (where rhoy < rhoz); and a local region (105) that is provided inside the third oxide layer and the second oxide layer (104b) so as to come into contact with the second electrode (106) without coming into contact with the first oxide layer (104a), and has a resistivity that is lower than that of the third oxide layer (104c) and is different from the resistivity of the second oxide layer (104b).