METHOD AND APPARATUS FOR DOPING BY LANE IN A MULTI-LANE SHEET WAFER FURNACE

摘要

A method and apparatus for forming a sheet wafer add material to a crucible having a feed area and a dump area, and melt the material to form a wafer growth are between the feed area and the dump area. The material is added to the feed area and removed through the dump area. The method and apparatus substantially simultaneously draw a plurality of sheet wafers from the growth area, and directly apply dopant to the melted material at the growth area. The dopant thus bypasses the feed area to dope at least a portion of the growth area.