PRECURSOR COMPOSITION FOR FORMING AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE

摘要

The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.