发明名称 DIELECTRIC CERAMIC COMPOSITIONS FOR HIGH FREQUENCY
摘要 PURPOSE: A dielectric ceramic composition for high frequency is provided to control a temperature coefficient of a stable resonance frequency by changing a molar ratio of ANb2O6 and BWO4. CONSTITUTION: A dielectric ceramic compound for high frequency is expressed by a composition formula ZrO2(a)-TiO2(b)-ANb2O6(c)-BWO4(d). In the formula, 0.20<=a<=0.40, 0.50<=b<=0.55, 0.10<=c<=0.30, 0.001<=d<=0.20, A=Zn1-xMgx(0.0<=x<=0.8), and B=Zn, Mg, Ni, Mn, or Co. An additive is added at an amount of 0.1 to 0.3wt% based on a total amount of the composition. The additive is at least one selected from NiO, MnCO3, and Y2O3. The composition is sintered at a temperature of 1200-1300°C. A manufacturing method of the dielectric for high frequency comprises the following steps. ZrO2, TiO2, ANb2O6(A=Zn1-xMgx;0.0<=x<=0.8), and BWO4(B=Zn, Mg, Ni, Mn, Co) are mixed, and the mixture is calcined at a temperature of 900-1100°C in air for 2-4 hours. An additive that is at least one selected from NiO, MnCO3, and Y2O3 is added to the mixture, and the mixture is wet-pulverized. The wet-pulverized mixture is pressure-molded to obtain a mold product. The molded product is sintered at a temperature of 1200-1300°C in air for 3 to 12 hours.
申请公布号 KR101271428(B1) 申请公布日期 2013.06.05
申请号 KR20110127743 申请日期 2011.12.01
申请人 RF M&C CO., LTD. 发明人 NOH, SEUNG HYUN;KANG, DONG HO
分类号 C04B35/48;C04B35/46;C04B35/495;H01B3/12 主分类号 C04B35/48
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