发明名称 Integrated circuit structure and method of forming the same
摘要 A method of forming an integrated circuit structure comprises the steps of: providing a semiconductor substrate having a first side and a second side opposite the first side; forming a hole extending from the first side of the semiconductor substrate into the semiconductor substrate; filling the hole with conductive material; thinning the second side of the semiconductor substrate to a first predetermined thickness, so that the bottom of the hole does not protrude from the second side of the semiconductor substrate; and etching the second side of the semiconductor substrate to a second predetermined thickness, thereby exposing the bottom of the hole.
申请公布号 US8455984(B2) 申请公布日期 2013.06.04
申请号 US20100946445 申请日期 2010.11.15
申请人 CHUNG KEE WEI;LIN CHIANG HUNG;SHIH NENG TAI;NANYA TECHNOLOGY CORP. 发明人 CHUNG KEE WEI;LIN CHIANG HUNG;SHIH NENG TAI
分类号 H01L29/40;H01L23/48;H01L23/52 主分类号 H01L29/40
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