发明名称 |
Integrated circuit structure and method of forming the same |
摘要 |
A method of forming an integrated circuit structure comprises the steps of: providing a semiconductor substrate having a first side and a second side opposite the first side; forming a hole extending from the first side of the semiconductor substrate into the semiconductor substrate; filling the hole with conductive material; thinning the second side of the semiconductor substrate to a first predetermined thickness, so that the bottom of the hole does not protrude from the second side of the semiconductor substrate; and etching the second side of the semiconductor substrate to a second predetermined thickness, thereby exposing the bottom of the hole.
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申请公布号 |
US8455984(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US20100946445 |
申请日期 |
2010.11.15 |
申请人 |
CHUNG KEE WEI;LIN CHIANG HUNG;SHIH NENG TAI;NANYA TECHNOLOGY CORP. |
发明人 |
CHUNG KEE WEI;LIN CHIANG HUNG;SHIH NENG TAI |
分类号 |
H01L29/40;H01L23/48;H01L23/52 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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