发明名称 |
Architecture for piezoelectric MEMS devices |
摘要 |
A piezoelectric thin film device comprises a piezoelectric thin film having upper and lower surfaces and a defined tilted crystal morphology, a top electrode disposed on the upper surface, a substrate having a surface morphology that corresponds to the defined crystallographically tilted morphology, and a bottom electrode disposed between and crystallographically linked to both the lower surface of the piezoelectric thin film and the substrate surface, the bottom and top electrodes having a parallel planar configuration relative to the plane of the substrate and the defined crystallographically tilted morphology having a crystallographic c-axis direction oriented at a >0° angle relative to the normal to the plane of the electrodes; and method of making the device.
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申请公布号 |
US8456061(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113013494 |
申请日期 |
2011.01.25 |
申请人 |
GIBBONS BRADY J.;SHELTON CHRIS;MARDILOVICH PETER;CRUZ-URIBE TONY S.;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
GIBBONS BRADY J.;SHELTON CHRIS;MARDILOVICH PETER;CRUZ-URIBE TONY S. |
分类号 |
H01L41/09 |
主分类号 |
H01L41/09 |
代理机构 |
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地址 |
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