发明名称 Architecture for piezoelectric MEMS devices
摘要 A piezoelectric thin film device comprises a piezoelectric thin film having upper and lower surfaces and a defined tilted crystal morphology, a top electrode disposed on the upper surface, a substrate having a surface morphology that corresponds to the defined crystallographically tilted morphology, and a bottom electrode disposed between and crystallographically linked to both the lower surface of the piezoelectric thin film and the substrate surface, the bottom and top electrodes having a parallel planar configuration relative to the plane of the substrate and the defined crystallographically tilted morphology having a crystallographic c-axis direction oriented at a >0° angle relative to the normal to the plane of the electrodes; and method of making the device.
申请公布号 US8456061(B2) 申请公布日期 2013.06.04
申请号 US201113013494 申请日期 2011.01.25
申请人 GIBBONS BRADY J.;SHELTON CHRIS;MARDILOVICH PETER;CRUZ-URIBE TONY S.;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 GIBBONS BRADY J.;SHELTON CHRIS;MARDILOVICH PETER;CRUZ-URIBE TONY S.
分类号 H01L41/09 主分类号 H01L41/09
代理机构 代理人
主权项
地址