发明名称 |
Method for producing a single crystal composed of silicon using molten granules |
摘要 |
Silicon single crystals are prepared from molten granules, by producing a first volume of molten silicon between a growing single crystal and the lower end of a silicon conical tube which is closed at its lower end, and encloses a central opening of a rotating silicon plate below which the tube extends, by means of a first induction heating coil arranged below the plate; producing a second volume of molten silicon by a second induction heating coil arranged above the plate; melting the lower end of the tube to form a passage for the second volume of molten silicon, the passage produced at a point in time when the second volume is not yet present or is less than double the volume of the first volume; and crystallizing monocrystalline silicon on the growing single crystal with consumption of molten silicon from the first and the second volume.
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申请公布号 |
US8454746(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113008053 |
申请日期 |
2011.01.18 |
申请人 |
VON AMMON WILFRIED;ALTMANNSHOFER LUDWIG;SILTRONIC AG |
发明人 |
VON AMMON WILFRIED;ALTMANNSHOFER LUDWIG |
分类号 |
C30B13/00;C30B11/00;C30B15/02;C30B15/06;C30B29/06 |
主分类号 |
C30B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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