| 摘要 |
PURPOSE: A plasma processing apparatus is provided to generate plasma with a uniform energy distribution in a chamber by uniformizing the length of an RF power path which reaches the front of a bottom electrode. CONSTITUTION: A chamber(110) has a processing space to generate plasma. A shower head(141) is installed on the upper inner side of the chamber to uniformly spray a processing gas to the chamber. A bottom electrode(150) is installed in the chamber and supports a substrate. A power source unit(142) is connected to the bottom electrode and applies RF power. An RF path changing unit(160) controls an RF power path along the surface of the bottom electrode.
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