| 摘要 |
Disclosed is a photovoltaic device provided with a substrate (1), and pin photovoltaic layers (11, 12) disposed on the surface of the substrate (1). The pin photovoltaic layers (11, 12) contain a first pin photovoltaic layer (11) in which a p-type semiconductor layer (3), an i-type semiconductor layer (4), which is an amorphous semiconductor layer, and an n-type semiconductor layer(5) are stacked. The first pin photovoltaic layer (11) comprises a first portion positioned on the surface of part of the substrate (1), and a second portion positioned on the surface of the other part of the substrate (1). The concentration of at least one impurity element selected from oxygen, nitrogen and carbon in the first portion is higher than the concentration of an impurity element in the second portion, and the first portion is thinner than the second portion. |
