OXIDE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: An oxide thin film transistor and a manufacturing method thereof are provided to improve the uniformity of an oxygen concentration by inputting oxygen to an active layer composed of an oxide semiconductor using plasma with the oxygen. CONSTITUTION: A gate electrode(121) is formed on a substrate(110). A gate insulation layer(122) is formed on the front of the substrate including the gate electrode. An oxide semiconductor layer(130a) is formed by depositing an oxide semiconductor on the substrate with the gate insulation layer. A photoresist pattern is formed on the oxide semiconductor layer. An active layer is formed by wet-etching the oxide semiconductor layer using the photoresist pattern. [Reference numerals] (AA) Surface treatment