发明名称 APPARATUS OF INGOT GROWING
摘要 PURPOSE: An ingot growing apparatus is provided to prevent a thermal loss by separating a second radiation shield from a first radiation shield to maintain the function of the second radiation shield. CONSTITUTION: A quartz crucible(20) receives silicon melt. A first radiation shield(52) blocks thermal radiation from the surface of the silicon melt. A second radiation shield(54) is located near the first radiation shield. The first radiation shield is separated from the second radiation shield. A first support unit(42) supports the first radiation shield. A second support unit(44) supports the second radiation shield.
申请公布号 KR20130056452(A) 申请公布日期 2013.05.30
申请号 KR20110122073 申请日期 2011.11.22
申请人 LG SILTRON INCORPORATED 发明人 KIM, SOO YUL;LEE, JAE HUN
分类号 C30B15/00;C30B29/06 主分类号 C30B15/00
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