发明名称 |
APPARATUS OF INGOT GROWING |
摘要 |
PURPOSE: An ingot growing apparatus is provided to prevent a thermal loss by separating a second radiation shield from a first radiation shield to maintain the function of the second radiation shield. CONSTITUTION: A quartz crucible(20) receives silicon melt. A first radiation shield(52) blocks thermal radiation from the surface of the silicon melt. A second radiation shield(54) is located near the first radiation shield. The first radiation shield is separated from the second radiation shield. A first support unit(42) supports the first radiation shield. A second support unit(44) supports the second radiation shield.
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申请公布号 |
KR20130056452(A) |
申请公布日期 |
2013.05.30 |
申请号 |
KR20110122073 |
申请日期 |
2011.11.22 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
KIM, SOO YUL;LEE, JAE HUN |
分类号 |
C30B15/00;C30B29/06 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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