发明名称 |
Electron beam device and electron beam application device using the same |
摘要 |
To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr-O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 mum and less than 1 mum, and the cone angle alpha of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba-O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.
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申请公布号 |
US8450699(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US200913133947 |
申请日期 |
2009.12.04 |
申请人 |
OHSHIMA TAKASHI;TOMIMATSU SATOSHI;HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
OHSHIMA TAKASHI;TOMIMATSU SATOSHI |
分类号 |
G21K7/00;B01J19/08;H01J9/04 |
主分类号 |
G21K7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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