发明名称 Electron beam device and electron beam application device using the same
摘要 To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr-O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 mum and less than 1 mum, and the cone angle alpha of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba-O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.
申请公布号 US8450699(B2) 申请公布日期 2013.05.28
申请号 US200913133947 申请日期 2009.12.04
申请人 OHSHIMA TAKASHI;TOMIMATSU SATOSHI;HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 OHSHIMA TAKASHI;TOMIMATSU SATOSHI
分类号 G21K7/00;B01J19/08;H01J9/04 主分类号 G21K7/00
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