SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce hydrogen concentration and oxygen vacancies in an oxide semiconductor film, and to improve reliability of a semiconductor device which includes a transistor using an oxide semiconductor film.

SOLUTION: A semiconductor device includes: a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

COPYRIGHT: (C)2013,JPO&INPIT