| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage element capable of achieving a high-speed operation, which has reversible and stable rewriting characteristics, excellent retention characteristics, and a high affinity for a semiconductor manufacturing process; and provide a manufacturing method of the nonvolatile storage element, a nonvolatile storage device equipped with the nonvolatile storage element and a nonvolatile semiconductor device. <P>SOLUTION: A nonvolatile storage element of an embodiment comprises: a first electrode 103; a second electrode 105; and a resistance change layer 104 arranged between the first electrode 103 and the second electrode 105 and having a resistance value reversibly changing based on an electric signal applied to between both electrodes 103, 105. The resistance change layer 104 includes at least a tantalum oxide and is formed so as to satisfy 0<x<2.5 when assuming that the tantalum oxide is represented as TaO<SB POS="POST">x</SB>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
