| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition, which is useful for producing a thick film resist pattern or the like to be used for forming a bump of a semiconductor device, and which extremely suppresses generation of trailing in the resist pattern. <P>SOLUTION: The chemically amplified photoresist composition comprises a resin (A), an acid generator (B), and a compound (X) expressed by formula (X). In formula (X), R represents a hydrogen atom, an alkyl group, an aryl group, or the like; and two of R<SP POS="POST">'</SP>represent a hydrogen atom, an alkyl group, an aryl group or the like, or two of R<SP POS="POST">'</SP>are bonded to each other to form a ring together with carbon atoms to which the two of R<SP POS="POST">'</SP>are bonded. <P>COPYRIGHT: (C)2013,JPO&INPIT |
