发明名称 LOW-VOLATILITY COMPOUNDS FOR USE IN FORMING DEPOSITED LAYERS
摘要 The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.
申请公布号 US2013125788(A1) 申请公布日期 2013.05.23
申请号 US201313739369 申请日期 2013.01.11
申请人 AITCHISON KENNETH;ATHALYE ATUL;MA CE 发明人 AITCHISON KENNETH;ATHALYE ATUL;MA CE
分类号 C09D1/00 主分类号 C09D1/00
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