发明名称 |
LOW-VOLATILITY COMPOUNDS FOR USE IN FORMING DEPOSITED LAYERS |
摘要 |
The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.
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申请公布号 |
US2013125788(A1) |
申请公布日期 |
2013.05.23 |
申请号 |
US201313739369 |
申请日期 |
2013.01.11 |
申请人 |
AITCHISON KENNETH;ATHALYE ATUL;MA CE |
发明人 |
AITCHISON KENNETH;ATHALYE ATUL;MA CE |
分类号 |
C09D1/00 |
主分类号 |
C09D1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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