发明名称 Flash memory devices and methods for controlling a flash memory device
摘要 A flash memory device includes a memory array and a memory control circuit. The memory array includes memory modules. Each memory module is located in a memory channel and includes a predetermined number of memory cells. The memory control circuit is coupled to the memory array via an address latch enable (ALE) pin and a command latch enable (CLE) pin. The ALE pin and the CLE pin are coupled to all of the memory cells and shared by all of the memory cells in the memory array.
申请公布号 US8447917(B2) 申请公布日期 2013.05.21
申请号 US20100721724 申请日期 2010.03.11
申请人 CHEN YEOW-CHYI;CHEN HONG-CHING;TU LI-CHUN;LIN TZU-CHIEH;PENG CHI-WEI;MEDIATEK INC. 发明人 CHEN YEOW-CHYI;CHEN HONG-CHING;TU LI-CHUN;LIN TZU-CHIEH;PENG CHI-WEI
分类号 G06F12/00;G06F12/02 主分类号 G06F12/00
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