| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows preventing the tendency of cracking of a semiconductor element and improving the formation yield of the element even if VIA holes are formed in high density. <P>SOLUTION: A semiconductor device includes: a substrate 110; a gate electrode 124, a source electrode 120, and a drain electrode 122 that are disposed on a first surface of the substrate and each have a plurality of fingers; VIA holes SC that are disposed at under portions of each source electrode 120; and a ground electrode that is disposed on a second surface of the substrate opposite to the first surface and is connected to the source electrode through the VIA holes. The VIA holes SC are disposed along a different direction from a cleavage direction of a compound semiconductor crystal forming the substrate 110. <P>COPYRIGHT: (C)2013,JPO&INPIT |
