| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaAs wafer capable of restraining the generation of slip, even if making that have a large diameter, and a method for producing the same. <P>SOLUTION: This method for producing GaAs wafer includes a growing process in which GaAs single crystal is grown by the LEC method and a wafer preparing process in which the GaAs single crystal obtained in the growing process is sliced to make the GaAs wafer, where sulfur is added in the raw material so that the sulfur atom concentration in the GaAs single crystal obtained in the growing process becomes uniformly not lower than 2×10<SP POS="POST">14</SP>cm<SP POS="POST">-3</SP>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
