| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayer wiring technique which has a high adhesion performance and high inter-wiring insulation reliability while maintaining effective low inter-wiring capacitance. <P>SOLUTION: In a semiconductor device, a first insulating film is at least one layer including a siloxane structure containing silicon, oxygen and carbon. In the siloxane structure within the first insulating film, the number of carbon atoms is more than the number of silicon atoms. On at least one of an interface between the first insulating film and a metal and an interface between the first insulating film and a second insulating film, a modified layer is formed in which the number of carbon atoms per unit volume is less than and the number of oxygen atoms is more than the inside of the first insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
