发明名称 |
Semiconductor Device and Substrate with Chalcogen Doped Region |
摘要 |
A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided.
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申请公布号 |
US2013119522(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201213709786 |
申请日期 |
2012.12.10 |
申请人 |
INFINEON TECHNOLOGIES AG;INFINEON TECHNOLOGIES AG |
发明人 |
SCHMIDT GERHARD;SCHULZE HANS-JOACHIM;KOLBESEN BERND |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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