METHOD FOR PRODUCING ASYMMETRIC DOUBLE-GATE TRANSISTORS, WHEREBY SYMMETRIC AND ASYMMETRIC DOUBLE-GATE TRANSISTORS CAN BE PRODUCED ON THE SAME SUBSTRATE,申请号EP20070866326-传众专利搜索

发明名称	METHOD FOR PRODUCING ASYMMETRIC DOUBLE-GATE TRANSISTORS, WHEREBY SYMMETRIC AND ASYMMETRIC DOUBLE-GATE TRANSISTORS CAN BE PRODUCED ON THE SAME SUBSTRATE
摘要
申请公布号	EP2104953(B1)	申请公布日期	2013.05.15
申请号	EP20070866326	申请日期	2007.12.28
申请人	COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES	发明人	VINET, MAUD;THOMAS, OLIVIER;ROZEAU, OLIVIER;POIROUX, THIERRY
分类号	H01L27/11;H01L21/8244	主分类号	H01L27/11
代理机构		代理人
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