发明名称 Method for fabricating tungsten line and method for fabricating gate of semiconductor device using the same
摘要 A method for fabricating a tungsten (W) line includes forming a silicon-containing layer, forming a diffusion barrier layer over the silicon-containing layer, forming a tungsten layer over the diffusion barrier layer, and performing a thermal treatment process on the tungsten layer to increase a grain size of the tungsten layer.
申请公布号 US8440560(B2) 申请公布日期 2013.05.14
申请号 US20080163943 申请日期 2008.06.27
申请人 SUNG MIN-GYU;CHO HEUNG-JAE;LIM KWAN-YONG;HYNIX SEMICONDUCTOR INC. 发明人 SUNG MIN-GYU;CHO HEUNG-JAE;LIM KWAN-YONG
分类号 H01L21/28;H01L21/44 主分类号 H01L21/28
代理机构 代理人
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