发明名称 |
Method for fabricating tungsten line and method for fabricating gate of semiconductor device using the same |
摘要 |
A method for fabricating a tungsten (W) line includes forming a silicon-containing layer, forming a diffusion barrier layer over the silicon-containing layer, forming a tungsten layer over the diffusion barrier layer, and performing a thermal treatment process on the tungsten layer to increase a grain size of the tungsten layer. |
申请公布号 |
US8440560(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20080163943 |
申请日期 |
2008.06.27 |
申请人 |
SUNG MIN-GYU;CHO HEUNG-JAE;LIM KWAN-YONG;HYNIX SEMICONDUCTOR INC. |
发明人 |
SUNG MIN-GYU;CHO HEUNG-JAE;LIM KWAN-YONG |
分类号 |
H01L21/28;H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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