SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device comprises: a semiconductor substrate; a channel region on the semiconductor substrate, the channel region comprising a quantum well structure; a source region and a drain region on two sides of the channel region; a gate structure on the channel region. The energy bands of the materials of the channel region, the source region, and the drain region are different from each other. A tunneling barrier structure exists between the source region and the channel region.