| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method improving resistance of an etching mask to enable etching processing of a portion to be etched in a recess formed by the existence of the etching mask, even when a dimension of the portion is 25 nm or less, especially, 20 nm or less. <P>SOLUTION: A pattern forming method includes the steps of: preparing a first mask and a base material having a hardly-invasive recess formed by the existence of the first mask; depositing a material for forming a second mask having etching resistivity higher than that of the first mask on an entire top surface of the first mask and a side face of the hardly-invasive recess in a circumferential manner by using a physical vapor deposition method from a side in which the first mask is formed, to form the second mask composed of a series of films; and etching the base material through the furst mask and the second mask. A dimension of the hardly-invasive recess is set to such a size that the material for forming the second mask cannot substantially reach a bottom face of the recess when the material for forming the second mask is deposited in a direction vertical to a principal plane of the base material by using the physical vapor deposition method. <P>COPYRIGHT: (C)2013,JPO&INPIT |
