| 摘要 |
<P>PROBLEM TO BE SOLVED: To resolve problems that, as a result of coexistence of an SOI-MISFET and a bulk-MISFET in a semiconductor integrated circuit device having a hybrid substrate structure, although structure designs suitable for respective gate materials are required in the case that both the MISFETs are produced by a gate-first method, because there has been a lot of knowledge about the bulk-MISFET in the past, and modification in the structure accompanied by change of the gate materials causes increase in cost of development, a structure of the bulk-MISFET is desired to be maintained as much as possible, and that change of the gate electrode materials by a conventional gate-last method may cause problems of complication of processes and increase in cost of manufacture. <P>SOLUTION: In a semiconductor integrated circuit device having a hybrid substrate structure where an SOI structure and a bulk structure coexist on a device surface of a semiconductor substrate, the height of a gate electrode of an SOI-type MISFET when using the device surface as a reference is set to be higher than the height of a gate electrode of a bulk-type MISFET. <P>COPYRIGHT: (C)2013,JPO&INPIT |
