OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor having high mobility and a low S value; and provide a field effect transistor manufacturing method which can obtain high characteristics even under a heat history at a low temperature or in a short time.

SOLUTION: A field effect transistor comprising a semiconductor layer composed of a complex oxide including an In element and a Zn element, and one and more element X selected from a group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoid in ratios of the following (1)-(3): In/(In+Zn)=0.2 to 0.8 (1); In/(In+X)=0.29 to 0.99 (2); Zn/(X+Zn)=0.29 to 0.99 (3).

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