发明名称 |
Semiconductor device including group iii- v compound semiconductor layer, and method of manufacturing the semiconductor device |
摘要 |
<p>A semiconductor device may include a silicon (Si) substrate including a hole, a hard mask around the hole on the Si substrate, a first material layer filling the hole and on a portion of the hard mask, an upper material layer on the first material layer, and a device layer on the upper material layer. The first material layer may be a Group III-V material layer. The Group III-V material layer may be a Group III-V compound semiconductor layer. The upper material layer may be a portion of the first material layer. The upper material layer may include one of a same material as the first material layer and a different material from the first material layer.</p> |
申请公布号 |
EP2587523(A1) |
申请公布日期 |
2013.05.01 |
申请号 |
EP20120188677 |
申请日期 |
2012.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE, SANG-MOON;SHIN, JAI-KWANG;CHO, YOUNG-JIN |
分类号 |
H01L21/02;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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