METHOD FOR SEPARATING EPITAXIAL GROWTH LAYER FROM GROWTH SUBSTRATE

摘要

PURPOSE: A method for separating an epitaxial layer from a growth substrate is provided to minimize damage to the epitaxial layer by etching a sacrificial growth layer using growth grooves. CONSTITUTION: A plurality of growth inhibition patterns(110) are formed on one surface of a growth substrate. A plurality of sacrificial growth layers(210) are separated by the growth inhibition patterns. An epitaxial layer(220) is vertically and horizontally grown from the sacrificial growth layers to form one layer. The epitaxial layer includes a plurality of growth grooves corresponding to the growth inhibition patterns. A support substrate is attached to the epitaxial layer. The epitaxial layer is separated from the growth substrate by etching the sacrificial growth layers using the growth inhibition patterns or the growth grooves.