| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing device capable of enhancing in-plane uniformity of an etching amount of a substrate to be processed at the time of etching of the substrate to be processed. <P>SOLUTION: A substrate processing device comprises: a processing chamber having a gas supplying section and a gas discharging section; a holding member that is disposed in the processing chamber and holds a substrate to be processed in a rotatable and vertically movable manner; a first temperature regulator for performing temperature regulation of gas supplied to the processing chamber; an etching liquid supplying member for supplying etching liquid to the substrate to be processed and performing an etching process; an etching liquid supplying tank connected to the etching liquid supplying member outside the processing chamber; a second temperature regulator for performing temperature regulation of the etching liquid in the etching liquid supplying tank; and a controlling mechanism for controlling the temperature regulation of the gas and the temperature regulation of the etching liquid performed by first and second temperature regulators such that a temperature in the processing chamber becomes higher than a temperature of the etching liquid in the etching liquid supplying tank and a difference between the temperatures becomes constant. <P>COPYRIGHT: (C)2013,JPO&INPIT |
