| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a resist composition for forming a negative pattern, which provides a high dissolution contrast with high sensitivity in a development using an organic solvent, and to provide a hole pattern by means of positive/negative reversal by developing using an organic solvent. <P>SOLUTION: The pattern forming method for obtaining negative pattern with an undissolved exposed portion comprises the steps of: applying a polymeric compound having vinyl alcohol replaced with an acid-labile group and maleic anhydride and/or maleimide as a repeating unit, an acid generator and a resist composition including organic solvent over a substrate; exposing the resist film with high-energy rays after heat processing; and dissolving an unexposed portion using a developer of organic solvent after heat processing. A photoresist film, which includes the polymeric compound having the vinyl alcohol replaced with the acid-labile group and the maleic anhydride and/or maleimide as a repeating unit and the acid generator, has the characteristics of high dissolving contrast in which the unexposed part has a quick solubility and the exposed portion has a slow solubility in forming positive/negative reverse image developed using organic solvent developer. By exposing using the photoresist film to perform organic solvent development, a minute hole pattern can be formed under a satisfactory dimensional control with a high sensitivity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
