| 摘要 |
[Problem] To provide a chip diode in which the p-n junction formed on the semiconductor layer can be prevented from being destroyed and fluctuations in characteristics can be minimized, even when the pad for providing an electrical connection with the exterior is subjected to significant stress; and to provide a diode package having the chip diode. [Solution] A chip diode (15) including: an epitaxial layer (21) provided with a p-n junction (28) constituting a diode element (29); an anode electrode (34) disposed along the surface (22) of the epitaxial layer (21) and electrically connected to a diode impurity region (23), which is the p-side pole of the p-n junction (28), the anode electrode having a pad (37) for establishing an electrical connection with the exterior; and a cathode electrode (41) electrically connected to the epitaxial layer (21), which is the n-side pole of the p-n junction (28); wherein the pad (37) is provided to a position set at a distance from a position immediately above the p-n junction (28). |
