发明名称 |
Penetrating implant for forming a semiconductor device |
摘要 |
A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.
|
申请公布号 |
US8426927(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US201113107783 |
申请日期 |
2011.05.13 |
申请人 |
CURELLO GIUSEPPE;POST IAN R.;LINDERT NICK;HAFEZ WALID M.;JAN CHIA-HONG;BOHR MARK T.;INTEL CORPORATION |
发明人 |
CURELLO GIUSEPPE;POST IAN R.;LINDERT NICK;HAFEZ WALID M.;JAN CHIA-HONG;BOHR MARK T. |
分类号 |
H01L29/66;H01L21/02 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|