发明名称 |
NONVOLATILE STORAGE DEVICE |
摘要 |
A nonvolatile storage device includes a tunnel insulating film disposed on a surface of a semiconductor substrate and a charge trap layer disposed in contact with an upper surface of the tunnel insulating film. The charge trap layer includes a second charge trap film disposed in contact with the upper surface of the tunnel insulating film and a first charge trap film disposed in contact with an upper surface of the second charge trap film.
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申请公布号 |
US2013092999(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201213612223 |
申请日期 |
2012.09.12 |
申请人 |
FUJII MOTOKI;ELPIDA MEMORY, INC. |
发明人 |
FUJII MOTOKI |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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