发明名称 |
METHOD OF PINNING DOMAIN WALLS IN A NANOWIRE MAGNETIC MEMORY DEVICE |
摘要 |
There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements. |
申请公布号 |
WO2013054098(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
WO2012GB52493 |
申请日期 |
2012.10.08 |
申请人 |
UNIVERSITY OF YORK |
发明人 |
O'GRADY, KEVIN;VALLEJO FERNANDEZ, GONZALO;HIROHATA, ATSUFUMI |
分类号 |
G11C19/08;G11C11/14 |
主分类号 |
G11C19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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