发明名称 Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same
摘要 There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
申请公布号 US8421167(B2) 申请公布日期 2013.04.16
申请号 US20100952895 申请日期 2010.11.23
申请人 PARTRIDGE AARON;LUTZ MARKUS;KRONMUELLER SILVIA;ROBERT BOSCH GMBH 发明人 PARTRIDGE AARON;LUTZ MARKUS;KRONMUELLER SILVIA
分类号 H01L21/00;H01L;H01L21/44;H01L23/28;H01L23/48;H01L23/52;H01L27/14;H01L29/40;H01L29/82;H01L29/84 主分类号 H01L21/00
代理机构 代理人
主权项
地址